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| NTE343 Silicon NPN Transistor RF Power Output (PO = 14W, 175MHz) Description: The NTE343 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe 7.5dB (VCC = 13.5V, PO = 14W, f = 175MHz) D Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 18W, f = 175MHz Application: D 10 to 14 Watt Output Power Amplifiers in VHF Band Mobile Radio Applications Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Collector-Emitter Voltage (RBE = ), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5A Collector Dissipation, PC TA = 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W TC = 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +175C Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100C/W Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Breakdown Voltage Emitter to Base Breakdown Voltage Collector to Base Breakdown Voltage Collector to Emitter Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Output Power Collector Efficiency Symbol Test Conditions Min Typ Max Unit 4 35 17 - - 10 14 60 - - - - - 50 15 70 - - - 1000 500 180 - - V V V A A - W % V(BR)EBO IE = 10mA, IC = 0 V(BR)CBO IC = 10mA, IE = 0 V(BR)CEO IC = 50mA, RBE = ICBO IEBO hFE PO C VCB = 25V, IE = 0 VEB = 3V, IC = 0 VCE = 10V, IC = 100mA, Note 1 VCC = 13.5V, Pin = 2.5W, f = 175MHz Note 1. Pulse Test: Pulse Width = 150s, Duty Cycle = 5%. .358 (9.1) E .051 (1.3) .142 (3.62) Dia .126 (3.2) .485 (12.32) B E C .395 (9.05) .485 (12.32) Min .189 (4.8) .100 (2.54) .177 (4.5) .019 (0.48) .347 (9.5) .122 (3.1) |
Price & Availability of NTE343
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